Design method of stacked NAND type FeRAM with 2-transistor type memory cell has been newly proposed. With newly introduced WL voltage generator which enables to compensate drain current variation caused by mis-alignment of the ferro-electric film removal mask 4F2 small cell size has been successfully realized. 32 stage of stacked NAND type FeRAM is a promising candidate for realizing high reliability compared with the conventional stacked NAND type 1-transistor FeRAM.
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