電気学会論文誌C(電子・情報・システム部門誌)
Online ISSN : 1348-8155
Print ISSN : 0385-4221
ISSN-L : 0385-4221
<電子物性・デバイス>
Hall-effect Measurement of Organic Semiconductor Layers Using Micro-scale Electrode Chips
Kei NodaAkira SugawaraTsutomu WatahikiKuniaki OkamotoTakahiro KiyosuKazumi MatsushigeYasuo Wada
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2012 年 132 巻 9 号 p. 1398-1401

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A new micro-electrode structure for Hall-effect measurements of organic semiconductor layers was proposed. The equations for the Hall-effect measurements based on the van der Pauw method indicate that narrower electrode gaps can decrease the resistance between contact points and enable Hall-effect measurement even for higher resistance materials such as organic semiconductors. According to this “scaling rule”, we fabricated a new electrode chip which consists of four small finger electrodes with a gap of micrometer-scale between diagonally opposite electrodes. In order to demonstrate the validity of this concept, Hall-effect measurements for FeCl3-doped poly(3,4-ethylenedioxythiophene) (PEDOT) was performed using this new electrode structure, revealing that a 10-μm-gap electrode chip is effective for evaluating carrier concentration of down to around 1019cm-3. These Hall electrode chips are quite useful for quantitative analysis of carrier concentration and carrier mobility in organic semiconductor materials.

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© 2012 by the Institute of Electrical Engineers of Japan
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