Effects of Temperature and Well Composition on Threshold Current Density for Compressive Strained-Layer Al_xGa_yIn_1-x-yAs Single Quantum Well Lasers

抄録

The well composition dependence of threshold current density (J_th) for a GRIN SCH AlGaInAs/InP 1.5% compressive strained single quantum well (SQW) laser operating at 1.55μm has been studied. High electron confinement energy of 0.25eV was obtained at a lower well composition of 0.09 with 7.1nm thick well. The threshold current density J_th has been calculated as a function of temperature. A minimum of J_th of 121Acm^-2 was obtained for the devices with Al_0.09Ga_0.17In_0.74As well, which is the lowest value ever reported at this wavelength. The characteristic temperature (T₀) has been estimated to be 112 K from the J_th as a function of temperature.