ECRプラズマ法によって作製したp型並びにn型GeN_x/Ge構造のコンダクタンス法による界面準位密度評価

抄録

A Ge-MIS structure has attracted the attention for next generation CMOS devices. We have reported that the GeN_x/Ge structure with low interface state density can be made by ECR (Electron Cyclotron Resonance) plasma technique, and that the interface state density of Ge-MIS structures can be evaluated by the characteristic analysis in the inversion region even at room temperature. In this report, we evaluated the interface state density of p- and n-type GeN_x/Ge structures by conductance technique at low temperature and the characteristic analysis at room temperature, and these of process dependences. We have successfully evaluated the interface characteristics of GeN_x/Ge structures. The interface-state density was symmetrically distributed with respect to midgap, and the density near midgap was close to that of the GeO₂/Ge structure.