抄録
Present status of III-V channel MOSFET is reported. Progress of Si MOSFET requires successive technology boosters and next candidate as technology booster is high mobility channel. In case of Ge, sufficient contact cannot be obtained in n-MOSFET. Thus, III-V channel became the candidate of high mobility channel in n-MOSFET. At present, interface state density around 1×1012 eV -1cm-2 by using ALD, high current density > 2 A/mm @VDD=0.5 V are reported. Formation of InGaAs film on large scale Si wafer is also reported. However, ultrathin channel taking short channel effect into account degrades mobility. Multi-gate FET and improvement of MIS interface are required for realization of high on-current in short channel devices.
