抄録
We report the dependence of I-V characteristics on doping concentration in a GaAsSb/InGaAs Double-Gate Tunnel FET (GaAsSb/InGaAs DG TFET) by simulation. Increase of doping concentration at source region is effective to achieve high on-current. However, it leads degradation of off-current. To suppress off-current, low doping concentration at drain region is effective, although on-current is decreased by high series resistance in the drain when drain concentration is too low. As a result of optimization, we obtain ION of 466 µA/µm and IOFF of 10 pA/µm at VDD 0.5 V in a GaAsSb/InGaAs DG TFET.
