抄録
The new wide-bandgap oxide semiconductor, gallium oxide (Ga2O3), has gained attraction as a promising candidate for power device applications because of its excellent material properties and suitability for mass production. Fundamental halide vapor phase epitaxy (HVPE) technology for Ga2O3 thin film growth has been developed for development of vertical Ga2O3 devices. Unintentionally-doped Ga2O3 layers grown by HVPE were high purity and high crystalline quality, and an electron density in the Ga2O3 film can be precisely controlled by Si doping in the wide range of n=1015-1018 cm-3. We fabricated vertical Ga2O3 Schottky barrier diodes (SBDs) with HVPE-grown n--Ga2O3 drift layers on single-crystal β-Ga2O3 (001) substrates. The SBDs demonstrated promising device performance as next-generation power devices, such as the specific on-resistances of about 3.0 mΩ·cm2, the ideality factors of almost equal to unity, and the off-state breakdown voltage of about -500 V.
