IGBT as the representative of the MOS-bipolar device has widely used for power conversion system, because it has the high controllability as MOS gate device and high breakdown voltage with low ON resistance as bipolar device simultaneously. IGBT has the potential to satisfy so many requirement such as low loss, low switching noise, high breakdown voltage, low cost, high efficiency and high reliability. In this paper, we summarize recent topics of IGBT and its analysis from the above points of view.
J-STAGEがリニューアルされました! https://www.jstage.jst.go.jp/browse/-char/ja/
