28 nm FD-SOIプロセスにおける基板バイアスを用いた低雑音増幅器の低消費電力化

抄録

Body-bias control technique which is useful method with fully-depleted silicon-on-insulator (FD-SOI) transistor circuits for low-power design is employed for an optimization method of the tradeoff between RF performance and current consumption. A 2.4-GHz low-power low-noise amplifier (LNA) is designed with a 28-nm FD-SOI process. By tuning drain current and body-biases, the LNA with low power consumption can be designed while keeping the performance of zero body-bias.