量子エネルギー輸送モデルを用いた先端MOSFET電気特性の解析

抄録

Improvement of device simulation is necessary to improve efficiency of development of advanced MOSFETs miniaturized to nanoscale. In particular, improvement of the fluid simulation model with quick calculation make a substantial contribution. The fluid simulation model includes a drift diffusion (DD) model, which is conventionally used, a quantum drift diffusion (QDD) model including quantum effects, and a quantum energy transport (QET) model including quantum effects and non-equilibrium phenomena.

In this paper, we analyze the electric characteristics of advanced MOSFET using QET, QDD and DD models. It is found that the quantum effect greatly influences the analysis of the short channel effect. As the gate length becomes shorter, the influence of the non-equilibrium phenomenon on the electric characteristics becomes larger, and the superiority of QET becomes higher.