抄録
In order to lower the epitaxy temperature of GaAs on ZnSe, effect of photo-irradiation on the growth and/or reaction mechanism in the initial growth stage in MOMBE of GaAs has been studied by using the surface photo-absorption (SPA) technique. It has been found that excess carriers photoinduced in ZnSe can contribute to the decomposition of TEGa on ZnSe, but those photoinduced in GaAs cannot. This has been attributed to the photocatalytic effect on the decomposition of TEGa on the ZnSe surface. It has been confirmed that the photo-irradiation is effective to enhance the growth rate at low temperatures, resulting in decreased epitaxy temperature of GaAs on ZnSe.
