BSCCO/Te半導体接合を用いた三端子素子の作製

抄録

In order to realize a superconductor/semiconductor three terminal devices such as SUBSIT, it is necessary to make a superconductor/semiconductor interface without Schottky behavior. We selected BSCCO superconductor and Te semiconductor as materials of the junction and conducted a basic experimental study concerning, (i) the electrical property of BSCCO/Te junction and, (ii) the characteristics of three terminal devices with the BSCCO/Te junction. It is found that the BSCCO/Te junction reveals small Schottky-barrier with the barrier height is about 17.5 meV at 10 K. In the three terminal devices composed of BSCCO, BSCO, Te and Au layers, the modulation of current-voltage characteristics of the BSCCO/Te junction is observed by current injection in the BSCCO/BSCO/BSCCO junction. The current gain coefficient is about 7.2×10^-3 at 4.2K.