抄録
This study describes a simultaneous multiple points measurement system for the electrostatic voltage. The induced voltage caused by the electric charge is measured by the high impedance single MOSFET amplifiers. The 12×8 sensing arrays are adopted to measure the 2-dimensional voltage distribution.
Moreover, a capacitive model around the gate of FET is proposed to design the probe figure for the detectors of the charge voltage. The induced voltage and the capacitance are numerically analyzed by the surface charge method. The capacitive model that mainly consists of gate capacitance is verified by this analysis. The dependence of the induced voltage on the length of the probe with an electrostatic shielding is also confirmed.
