抄録
To study the initial growth of Ag thin film in the sputtering method, Ag thin films were deposited using a facing-targets sputtering apparatus that can attain a high vacuum of 10-9 Torr order. We observed the film’s growth process by using a scanning electron microscope and an in-situ spectroscopic ellipsometer. The thickness at which the film turns into a continuous film could be decreased by using the bias sputtering method. However, since Ag atom in thin film can move like a liquid even at room temperature and the morphology of the thin film changes as time passes, fabrication of continuous film was very difficult. The structure of Ag films in the initial growth stage having an isolated island can be analyzed with the model of Maxwell-Garenett, and the films thicknesses above 5nm can be analyzed with Bruggeman’s model, where the islands are connected. The results of our study clearly showed that the situation and changes in the morphology of the film could be evaluated by using the spectroscopic ellipsometer.
