抄録
We demonstrate the luminance control of organic electroluminescent (EL) device with indium tin oxide (ITO) treated by argon plasma, as a new patterned process to ITO substrate itself for producing the organic EL device under a continuous dry-process. The high-precision patterned image in the organic EL device was obtained. The sheet resistance of the ITO layer treated by argon plasma increased remarkably, although the work function of the ITO layer did not changed. The change in sheet resistance of ITO layer is attributed to changes in morphology of the ITO surface, i. e., structural modification by argon ion and electron.
