電気学会論文誌A(基礎・材料・共通部門誌)
Online ISSN : 1347-5533
Print ISSN : 0385-4205
ISSN-L : 0385-4205
特集論文
ZnOバリスタの粒界と課電劣化の関係
高田 雅之吉野 浩行吉門 進三
著者情報
ジャーナル フリー

2006 年 126 巻 3 号 p. 105-112

詳細
抄録

The effect of electrical degradation characteristics and microstructure of Sb2O3-added-ZnO varistors were investigated by FE-SEM, energy dispersion X-ray spectroscopy (EDX), optical microscope, X-ray diffraction (XRD), and voltage-current (V-I) characteristics. The nonlinearity index α of V-I characteristic for the Bi-Mn-Co-Sb2O3-added ZnO varistors decreased with increasing amount of Sb2O3 after the electrical degradation. The twin crystal of ZnO was formed by the addition of Sb2O3. The number of twin crystal, of which two c-axes are perpendicular to twin plane, increased and the number of twin crystal, of which two c-axes are parallel to twin plane, decreased with increasing the amount of addition of Sb2O3. It is suggested that electrical degradation is affected by combination of orientation of ZnO grains containing twin planes and double Schottky barrier may be not formed in the twin plane.

著者関連情報
© 電気学会 2006
前の記事 次の記事
feedback
Top