Electrical Properties of ZrO₂ Thin Film Prepared by Sol-Gel Method

Abstract

The ZrO₂ thin films were prepared by sol-gel method using metal alkoxide [Zr(O-n-Bu)₄]. These films were monoclinic crystalline phase ZrO₂ which can't be prepared by general method. The electrical properties of ZrO₂ thin film show good electrical insulation ones. It seems that the ZrO₂ film's breakdown occurs by the electron avalanche from the following results: ∂EB/∂T_??_0 and ∂E_B/∂d<0. The ZrO₂ thin film is expected as the capacitor and coating for insulating film.