抄録
Galvanomagnetic effect in ferromagnetic thin films is widely utilized for magnetoresistive devices. Especially, magnetoresistance (MR) effect attracts much attention in use of the sensors and readout heads. Galvanomagnetic electromotive force (GEMF) effect, which has been called planar Hall effect, is also observed in magnetic films. These two effect are originated from a same phenomenon, where the electromotive force is generated by interactions between conduction electrons and magnetic field. Although the fact, the characteristic of MR and GEMF effects are different. This is because that MR effect is observed along the current direction, whereas that GEMF effect is observed perpendicular to the current. In this paper, MR and GEMF is studied in view point of the differences of their characterization.
