LBヘテロ膜MIMの直•並列接続の電流源特性

抄録

In the present paper, MIM structures of LB heterofilms based on LB Heterofilms of arachidic acid LB films (C₂₀) and 2-pentadecyl-6, 7', 8, 8'-TCNQ LB films (TCNQ) were deposited on the slide glass of microscope as follows.
Al/C₂₀(4L)/TCNQ(4L)/C₂₀(4L)/Al
Here, 4L indicates the number of monolayers, namely 4 monolayers.
It has been well known that voltage is generated in such a MIM structures, and voltage generation seems to be due to chemical reaction in LB films. However, it is suggested in our investigation that the cause of voltage generation is diffusion of electrons in LB films.
In the pressent paper, it is shown that the series and parallel connection cheracteristics of the present MIM structures can be explained by the equivalent circuit of the MIM expressed by current source and resistance.