LBヘテロ膜MIMの発生電圧温度特性

抄録

Voltage generated in MIM structures of Langmuir-Blodgett(LB) heterofilms was measured at temperatures 28.5°C, 43.6°C and 60.0°C. Structures of MIM samples are as follows,
Al/C₂₀/TCNQ/C₂₀/Al
In above structures, C₂₀ indicate arachidic acid LB films and TCNQ is 2-pentadecyl-7, 7', 8, 8'-TCNQ LB film. Voltage generated in the present MIM samples decreased with temperature rise. Investigating the phenomenon mentioned above, temperatrure dependences of diffusion constant D of electrons in LB heterofilms and conductance α of LB heterofilms are measured, and voltage generation was analyzed by D and α. As a result, temperature characteristics of generated voltage is due to temperature dependences of diffusion of electrons in LB heterofilms and conductance of LB heterofilms. In this case, it is considered that voltage generation is due to diffusion current by electrons and conduction current in LB heterofilms.