1996 Volume 116 Issue 11 Pages 978-981
In order to enhance the etching rate at lower pressure, an electron-beam assisted inductively coupled plasma (ICP) reactor was developed, in which the electron-beam was injected into the reactor through a thin polymer film, and a pattern of 0.2μm was etched on an Si wafer. We discussed the peculiarities of plasma produced by the above reactor in comparison with the data we got as a result of probe measurements. It was found that the electron-beam injection into the ICP decreases the floating and the plasma potentials and increases the electron temperature and the density slightly.
The transactions of the Institute of Electrical Engineers of Japan.A
The Journal of the Institute of Electrical Engineers of Japan