抄録
The paper describes a charge simulation method named β-method which simulates the field with fictitious charges only near the boundary surrounding the dielectric with higher dielectrlc constant. The comparative calculation has shown that the β-method keeps good accuracy even in the condition the conventional technique (α-method) fails to give reasonable results. The β-method is more advantageous when the ratio of dielectric constant exceeds about 4. The paper also compares two methods in a mixed (capacitive-resistive) field where the conductivity may change by many orders.
