抄録
A Monte Carlo technique is used to investigate the electron transport and to compile data on the transportparameters in SiH4/Ar mixtures under a wide range of the electric field from E/p0=20 to 1000 V/cmTorr andSiH4 mixing ratios from 0 to 100%. The calculations show that the drift velocity vd, the diffusion coefficientp0DL, and the electron mean energy εdecrease monotonously with increasing the silane content, except thecase in a low electric field. On the other hand, the ionization rate Ris, the attachment rate Rat, the vibrational excitation rate Rvb13 and Rvb24 and the dissosiation rates Rd2, and Rd3, of the silane molecule have a maximumvalue at a certain mixing ratio. The ionization rate Ria and the excitation rate Rext(1-6) of argon atom, however, decrease sharply with increasing the silane content. These results are discussed using the data on thevariations of the electron energy distribution due to the electric field strength and the mixing ratios.
