A Monte Carlo technique is used to investigate the electron transport and to compile data on the transportparameters in SiH
4/Ar mixtures under a wide range of the electric field from E/p
0=20 to 1000 V/cmTorr andSiH
4 mixing ratios from 0 to 100%. The calculations show that the drift velocity v
d, the diffusion coefficientp
0D
L, and the electron mean energy εdecrease monotonously with increasing the silane content, except thecase in a low electric field. On the other hand, the ionization rate Ris, the attachment rate R
at, the vibrational excitation rate R
vb13 and R
vb24 and the dissosiation rates R
d2, and R
d3, of the silane molecule have a maximumvalue at a certain mixing ratio. The ionization rate R
ia and the excitation rate R
ext(1-6) of argon atom, however, decrease sharply with increasing the silane content. These results are discussed using the data on thevariations of the electron energy distribution due to the electric field strength and the mixing ratios.
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