電気学会論文誌A(基礎・材料・共通部門誌)
Online ISSN : 1347-5533
Print ISSN : 0385-4205
ISSN-L : 0385-4205
パルスレーザーデポジシヨン法により製作した光触媒TiO2薄膜
寺嶋 正博井上 成美柏原 茂藤本 良三
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2001 年 121 巻 1 号 p. 59-64

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Photocatalytic TiO2 Thin-films Deposited by Pulsed Laser Deposition Technique Masahiro Terashima, Non-Member(National Defense Academy), Narumi Inoue, Member (National Defense Academy), Shigeru Kashiwabara, Member (National Defense Academy), Ryozo Fujimoto, Member(Nippon Bunri University)Photocatalytic Tio2 thin films have been prepared by the pulsed laser deposition (PLD) method and their crystalline and electrochemical characteristics have been investigated by X-ray diffraction (XRD) and electrochemical measurements. The results show that the anatase crystal is grown at lower substrate temperature than other deposition methods. The XRD data of the films are also studied as a function of the film thickness and the repetition frequency of laser pulse. At the substrate temperature of 300°C, the XRD peaks of anatase increase as film thickness increases. Also the XRD anatase peaks of the films deposited at high repetition frequency increase. These facts indicate that the temperature difference between the substrate and the surface of the growing film causes the change in crystalinity. From the results of electro-chemical experiment, on the other hand, it is found that the current density of the sample fabricated at the substrate temperature 100-200°C with the thickness of about 1 μm is the highest.
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