抄録
Plasma CVD is widely used for deposition of hydrogenated amorphous silicon (a-Si:H) based materials. To obtain desired properties of deposited film in this technique, controllable parameters such as gas pressure, gas flow rate and discharge power are varied empirically, and no precise simulation is so far available. Thus in this work, an analysis based on macroscopic model was developed to provide a tool to understand the relationship between those controllable parameters and the film properties such as germanium content in a-SiGe:H alloy films. The results were compared with some experiments, and it was shown that these are in good agreement.
