2014 年 134 巻 11 号 p. 956-961
We developed an interleaved DC/DC converter with SiC devices. We applied full-SiC modules including MOSFETs and SBDs to the interleaved DC/DC converter to achieve a high power density. SiC has a high temperature resistance, which facilitates improvement in high-frequency drives. We achieved a high power density by utilizing the high temperature resistance feature. We also fabricated the prototype and tested it with loads up to 65kW.
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