IEEJ Transactions on Industry Applications
Online ISSN : 1348-8163
Print ISSN : 0913-6339
ISSN-L : 0913-6339
On-Chip New Current Sensing Method with High Accuracy Using Field Effect Resistance for Intelligent Power MOSFETs
Norihito TokuraTsuyoshi YamamotoKunihiko Hara
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1992 Volume 112 Issue 9 Pages 799-806

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Abstract
Current sensing function is indispensable to modern intelligent power semiconductor devices to detect whether or not a load is driven at a predetermined power level and/or an overcurrent at the time of overload, in order to protect the load and the power device.
In this paper, a new current sensing device technology is presented firstly, in which the operation principle is based on detecting voltage drop through a field effect resistance (FER) consisting of mainly channel resistance in DMOSFET. Our new current sensing device consists of DMOS, FER & voltage sensing cell, and lateral MOSFET operated as a temperature compensation resistor in a same chip. The FER-cell has the same structure as DMOS cell, and lateral MOSFET is electrically isolated from substrate by p-n junction. The accuracy of current sensing is within ±2% in a temperature range from -40 to 150°C.
The new current sensing device technology which can be integrated easily into power MOSFETs realizes intelligent power MOSFETs with high accurate current sensing and control in a wide temperature range.
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© The Institute of Electrical Engineers of Japan
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