Switching Characteristics Analysis of GTO with Snubber using Finite Element Method

Abstract

Recent development in power electronics has made power semiconductor device larger and complicated, and device simulation is necessary to predict their characteristics. From the fundamental equations of semiconductor device, potential distribution and carrier concentrations can be solved using the finite element method. In this study, we make formulation for one dimensional analysis of a gate turn off thyristor (GTO) and simulate switching characteristics in order to know the effects of snubber circuit. In conclusion snubber condensor is necessary to suppress spike voltage, but increases the turn off loss of GTO.