Transition Edge X-ray Sensor Using Anodic Bonding Wafer

Abstract

We describe the fabrication of Transition Edge X-ray Sensor(TES) using anodic bonding wafer that is suitable for large format array that is necessary for industrial application and astronomy. We also report the performance of TES for single pixel. The characteristic points of our fabrication are 1) use of silicon-to-glass bonding(anodic bonding) wafer, yielding the large mechanical strength of the wafer, 2) only front side patterning and etching, yielding the easy fabrication. The energy resolution of TES operated at 113 mK was 9.2 eV(FWHM) for Mn K<1(5899 eV) and effective decay time(τ_eff) 71 μs. The energy resolution is 10 times better than conventional silicon-detector(130eV) and the count rate(1/6τ_eff) reached about 2.4 kcps.