ZnO Films Grown on Si substrate by Radical Source MBE

Abstract

A radical-source molecular beam epitaxy (RS-MBE) apparatus was used to grow ZnO films on Si substrates. The surface nitridation of the Si substrates prior to the ZnO growth was found to be critical for improving the film quality. The ZnO films with strong c-axis orientation and predominant near bandedge emissions have been successfully grown.