Properties of InSb Thin Films Grown by Molecular Beam Epitaxy and Their Applications to Magnetic Field Sensors

Abstract

Recent developments in InSb thin film magnetic sensor technology were reviewed. Tin (Sn) doped InSb thin films grown on GaAs substrates by molecular beam epitaxy, showed high electron mobility and sheet resistance with very small temperature dependence. High sensitivity Hall elements and magnetoresistance elements were fabricated using Sn doped InSb thin films and their electrical and magnetic properties were investigated. The potential use of magnetic sensors for non-contact detection of linear motion, rotation and future energy saving in electric power systems was discussed.