電気学会論文誌E(センサ・マイクロマシン部門誌)
Online ISSN : 1347-5525
Print ISSN : 1341-8939
ISSN-L : 1341-8939
論文
高いキュリー温度を有する強誘電体エピタキシャル薄膜の圧電特性
吉村 武Susan Trolier-McKinstry
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2004 年 124 巻 4 号 p. 117-123

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The ferroelectric and piezoelectric properties of Pb(Yb1/2Nb1/2)O3-PbTiO3 (PYbN-PT) and BiScO3-PbTiO3 (BiScO3-PT) epitaxial films were investigated. The PYbN-PT(50/50) and BiScO3-PT(50/50) films showed a curie temperature near 380 and 450 °C, respectively. For 1 μm-thick PYbN-PT epitaxial films, the highest remanent polarization (29 μC/cm2) and effective piezoelectric coefficient e31,f (-14 C/m2) were observed in the (001) PYbN-PT (50/50) film. A 3 μm-thick (001) PYbN-PT (50/50) film exhibited a higher e31,f coefficient of -19 C/m2. (001) BiScO3-PT epitaxial films also had well saturated hysteresis loops with a remanent polarization of 36 μC/cm2. The e31,f piezoelectric coefficient was -9 C/m2. The obtained piezoelectric properties of BiScO3-PT films were comparable to that of Pb(Zr, Ti)O3 or relaxor ferroelectric-PbTiO3 films.
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© 電気学会 2004
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