A very low-temperature process for preparation of functional oxide thin films is newly proposed and examined by sol-gel-hydrothermal combined treatment. A series of oxide ferroelectric thin films have been prepared by the method in various mineralizer, alkaline solutions. Especially PZT film grown in KOH+Pb(OH)2 solution at final post-baking temperature as low as 400°C, showed a well-saturated, good P-E hysteresis loop with Pr=26.3μC/cm2 and Ec=40.1 kV/cm, respectively.
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