電気学会論文誌E(センサ・マイクロマシン部門誌)
Online ISSN : 1347-5525
Print ISSN : 1341-8939
ISSN-L : 1341-8939
論文
マイクロマシンによる乱数の発生
三田 信年吉 洋安宅 学藤田 博之
著者情報
キーワード: 乱数, 乱数発生器, SOI, Deep RIE
ジャーナル フリー

2004 年 124 巻 9 号 p. 316-320

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We have successfully developed a novel micromechanism of random number generator (RNG) by using the silicon micromachining technique. The MEM(Micro Electro Mechanical)RNG produce a series of random numbers by using the pull-in instability of electrostatic actuation operated with a typical dc 150 volt. The MEM RNG is made by the deep reactive ion etching of a silicon-on-insulator(SOI) wafer, and is very small compared with the conventional RNG hardware based on the randomness of thermal noise or isotope radiation. Quality of randomness has been experimentally confirmed by the self-correlation study of the generated series of numbers. The MEM RNG proposed here would be a true random number generation, which is needed for the highly secured encryption system of today’s information technology.

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© 電気学会 2004
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