2007 年 127 巻 12 号 p. 559-560
We have investigated the degradation of ferroelectric property of Pb(Zr,Ti)O3(PZT) thin films derived from wet etching of PZT thin films. We have also investigated the reduction of the degradation with LaNiO3 (LNO) thin films as a buffer layer between Pt and PZT thin films. The polarization and dielectric constant of the PZT thin films were reduced to about 70% through wet etching. It has found that the degradation can be avoided with LNO thin films.
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