抄録
The top silicon layer of single-crystal silicon-on-insulator wafer is used to fabricate flexible membrane for a deformable mirror. Boron implantation was carried out to control the stress of the silicon membrane. In the case of 415μm diameter 1μm thick mirror, the deflection of 320nm was generated due to the bending moment at the rim. After the implantation, it decreased to 120nm deflection by the increased of tensile stress. Moreover, etching the membrane from the thickness of 1μm to 480nm. The deflection decreased to 20 nm and the flat region of mirror increased to 300μm in diameter.
