抄録
We have been developing the pseudo-SOC technology for one-chip module integration of heterogeneous devices that realizes high electrical performance and high density of devices embodying the advantages of both SOC technology and SIP technology. Especially, this technology is available for MEMS-LSI integration. We developed a 0.2mm-thickness one-chip module integrating a MEMS shock sensor and a sensing amplifier LSI by applying this technology. The MEMS shock sensor and the sensing amplifier LSI were connected by high-rigidity epoxy resin optimized the material constants to reduce the stress and the warpage resulting from resin shrinkage due to curing. Then the planar insulating layer and the redistributed conducting layer were formed on it for the global layer. The MEMS shock sensor was preformed to be modularized with a glass cap. Electrical contacts were achieved by bonding of Au bumps on the MEMS fixed electrodes and via holes filled with Ag paste of the glass cap. Functional performance was confirmed by obtaining signal corresponding to the reference signal of the pick-up sensor. Furthermore, stress analysis was performed using the FEM model simulation considering the resin shrinkage.
