抄録
Dry etching process is one of the key technologies for manufacturing state-of-the-art devices both in LSI and MEMS fields. The importance of the process will be expanded in the future. In this paper, the technological history of silicon dry etching process has been reviewed from the viewpoint of demands and technical approach. The main demands, high through put, high etching anisotropy, high controllability are universal up to present date. The prospect for future trend is also exhibited.
