抄録
Shunt-type MEMS resistive switches perform low loss and high isolation in a wide frequency band. However, they suffer from a high driving voltage similar to other MEMS electrostatically-driven switches. The decrease of the gap between the driving electrodes causes stronger electrostatic force, leading to the driving voltage decrease. On the other hand, the reduction of the gap causes another problem, e.g. decreasing the isolation. In this paper, in order to investigate the influence of the gap reduction on the performance of the MEMS switches, we fabricated a switch with the gap of 0.9 μm and compared it with one having the gap of 2 μm. The measured results have showed that the fabricated narrow gap switches have as good RF frequency characteristics as the 2 μm gap ones, owing to forming a slit in the moving electrode over the transmission line.
