Tensile Test on (110) <110> Thin Film Single Crystal Silicon with Different Processing Conditions

Abstract

We conducted uni-axial tensile test using electrostatic-force grip on thin film single crystal silicon of <110> direction. The specimens were fabricated on (110) SOI wafer (length: 120µm, width: 5µm, thickness: 5µm) and went through 3 different conditions of patterning process composed of Bosch process and wet etching process for surface residue removal. As a result, improvement of surface morphology brought increase of average tensile strength from 1.9GPa to 3.6GPa. SEM observation of fractured specimens suggests that, regardless of processing conditions, relationship between tensile strength and the top-view length of (110) crystal plane of specimens can be expressed with a common equation.