抄録
A method for fabricating electroplated structures using side wall electrical contact has been developed. This method consists of three key processes: first, a lift-off process using an aluminum sacrifice layer; second, an electroplating process using side wall electrical contact between the aluminum sacrifice layer and the metal layer; and third, a conductive layer removal process, which prevents abnormal etching due to a local cell effect of the metal layers. In the lift-off process, a roof shaped pattern is fabricated by side-etching an aluminum layer. It is easy to remove the metal layer and the resist. In the electroplating process, the resistance of the electrical contact in the side-wall between the aluminum sacrifice layer and the metal layer is nearly equal to that of a conventional seed layer and can be applied as a feed line. In the conductive layer removal process, the aluminum sacrifice layer is an amphoteric, and can be removed with a dilute alkali solution. With this method, abnormal etching of the electroplated structure and the metal layer does not occur.
