A recently developed PZT sol-gel deposition machine for minimal fab is employed to form a PZT film with various temperature ramping rates. The machine is equipped with a spin coating unit for a PZT sol-gel solution and laser heating unit which is newly applied to use as a rapid thermal annealing (RTA) for a device manufacturing process on a half-inch wafer. The thin film formation can be repeated for many times without terminating the process. The laser heating system can control the ramping rate of the heating in a wide range. In this work, we introduce for the first time detailed analyses of the PZT film annealed using laser heating method. Annealing with a high ramping rate of 60°C/sec in a crystallization process, a PZT (100) film is formed on the Si wafer. In contrast, with a low ramping rate of 1.7°C/sec, a PZT (111) film is formed. The PZT (100) and (111) films are analyzed using X-ray diffraction and Rutherford Backscattering Spectroscopy.
J-STAGEがリニューアルされました! https://www.jstage.jst.go.jp/browse/-char/ja/
