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Outline Fine Pattern Generation Using Partial UV Curing of Photoresist
2017 年 137 巻 1 号 p. 44-45
詳細
2017 年 137 巻 1 号 p. 44-45
UV curing makes photoresists inactive to additional UV exposure and is applied to generate a fine outline pattern from a wider original mask pattern. Using the standard g-line photoresist, a roughly 1-µm-wide pattern is produced. The final pattern is a UV-cured photoresist that does not remain on the other material, suggesting few limitations on applications.
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