2017 Volume 137 Issue 12 Pages 422-425
Oxygen gas sensor based on oxygen intercalation in the layered semiconductor CuFeTe2 has been developed. In this study, fine powder was obtained by pulverizing CuFeTe2 single crystal. Three groups with the range of grain size: 0 - 20 µm, 20 - 40 µm and 40 - 63 µm, was divided by sieves from the powder. CuFeTe2 ceramics was synthesized with each group. We measured the response to oxygen gas of these ceramics. Sensitivity is defined as a saturation value of resistance change rate when oxygen intercalation occurs. It has been shown from experimental results that the sensitivity improved by 7.0 times with making grain size smaller from 40 - 63 µm to 0 - 20 µm.
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