極薄Au薄膜を用いたウェハスケール・大気中常温接合のためのプラズマ処理方法の検討

抄録

Pretreatment using Ar or O₂ plasma was investigated for wafer-scale room-temperature bonding using ultrathin Au films in ambient air. The main difference between Ar plasma and O₂ plasma is their surface activation mechanism: physical etching and chemical reaction, respectively. Bonding strength of samples obtained by Ar plasma treatment was strong enough to be broken from Si substrates, while that of samples obtained by O₂ plasma treatment was only about 0.1 J/m².