2021 年 141 巻 2 号 p. 39-43
The purpose of this article is for the establish of the releasing technologies of ferroelectric thin film capacitors using the internal stress of plated film. The stress analysis in simulation and the confirmation of experiment was carried out. As a result, it was demonstrated that the thin film capacitor can be actually released off. It was also confirmed that the performance as a capacitor after releasing was also good for the expected application.
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