Investigation of MEMS Process using SiON Film Deposited by Reactive Sputtering

Abstract

In this study, we examined the film quality improvement and the etching characteristics of BHF and KOH solutions of SiON films prepared by reactive sputtering, and their application to MEMS processes. From these results, it was found that the sputtered SiON film can be patterned by a normal photo resist film because it dissolves relatively easily in BHF solution, and that it has good tolerance of KOH etching and is effective as a protective film in the diaphragm process. Finally, the MEMS process of the piezo-resistive pressure sensor was proposed, and the sample was actually prepared. As a result, the sputtered SiON film produced in this experiment can be sufficiently adapted in the MEMS process, and it is effective for the simplicity and cost reduction of the MEMS process. It is expected that it is possible to propose a new MEMS process by these advantages of the sputtered SiON film.