This paper addresses the hetero-integration of ferromagnetic NdFeB and piezoelectric PZT thin films for MEMS energy harvesting devices. Lamination structure of PZT and NdFeB is achieved by using barrier and passivation layer of SrRuO3/SiO2 thin films. The magnetic property of NdFeB is comparable to those of conventional one even after a high temperature deposition of PZT thin film. Ferroelectric hysteresis curve of PZT can be also observed. Individual pattering of PZT and NdFeB thin films in other place on a full wafer with a diameter of 100 mm is also examined for the future batch fabrication. For the batch fabrication test, the electrical and piezoelectric properties of the PZT/Si cantilever are comparable to those without NdFeB deposition process. A good magnetic property is also observed. These results demonstrate that the microfabrication process of NdFeB and PZT can be integrated at the level of batch fabrication.
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