シリコンの限界を超えるスーパー時間分解イメージセンサを目指して

抄録

The temporal resolution limit of silicon image sensors is 11.1 ps. The super-temporal resolution (STR) is defined as the resolution shorter than the limit, since common image sensors for visible light are made with silicon semiconductors. To achieve the STR, a backside-illuminated branching image sensor with a germanium photodiode and a center resistive gate is proposed, and the pros and cons are analyzed. It is verified that the proposed sensor structure can achieve the temporal resolution of 100 ps with an existing 120-nm process technology. A finer process will realize the STR in the near future.